Total Ionizing Dose Effects on Strained Ge pMOS FinFETs on Bulk Si

In this paper, we have characterized the total ionizing dose response of strained Ge p MOS FinFETs built on bulk Si using a fin replacement process. Devices irradiated to 1.0 Mrad(SiO₂) show minimal transconductance degradation (less than 5%), very small V_th shifts (less than 40 mV in magnitude) and very little ON/OFF current ratio degradation (<5%), and only modest variation in radiation response with transistor geometry (typically less than normal part-to-part variation). Both before and after irradiation, the performance of these strained Ge p MOS FinFETs is far superior to that of past generations of planar Ge p MOS devices. Finally, these improved properties result from significant improvements in processing technology, as well as the enhanced gate control provided by the strained Ge FinFET technology.. Authors: Zhang, En Xia [Vanderbilt Univ., Nashville, TN (United States). Dept. of Electrical Engineering and Computer Science]; Fleetwood, Daniel M. [Vanderbilt Univ., Nashville, TN (United States). Dept. of Electrical Engineering and Computer Science]; Hachtel, Jordan A. [Vanderbilt Univ., Nashville, TN (United States). Dept. of Physics and Astronomy]; Liang, Chundong [Vanderbilt Univ., Nashville, TN (United States). Dept. of Electrical Engineering and Computer Science]; Reed, Robert A. [Vanderbilt Univ., Nashville, TN (United States). Dept. of Electrical Engineering and Computer Science]. DOE Contract: AC05-00OR22725; FG02-09ER46554. Subjects: 10 keV X-ray; 73 NUCLEAR PHYSICS AND RADIATION PHYSICS; geometry dependence; germanium FinFETs; total ionizing dose