Photonic Crystal Surface Emitting GaSb-Based Type-I Quantum Well Diode Lasers

The GaSb-based epitaxially regrown monolithic diode PCSELs operating near 2 μm at room temperature in continuous wave regime and generating 30 mW of output power from 200 μm diameter aperture have been designed and fabricated. Here, the devices demonstrated CW threshold current density of about 500 A/cm ². The laser output power was enhanced thanks to increased buried void area fill-factor in the photonic crystal layer with multiple voids per unit cell. The PCSEL generated ultra-low divergence donut shape beams at the currents near threshold. At higher injection currents, the device brightness was limited by excitation of the higher order lateral modes. Generation of the vector-vortex beams of different types by different band edge states of the buried photonic crystal was observed.. Authors: Shterengas, Leon [Stony Brook Univ., NY (United States)] (ORCID:0000000285633274); Kipshidze, Gela [Stony Brook Univ., NY (United States)] (ORCID:0000000300085692); Stein, Aaron [Brookhaven National Laboratory (BNL), Upton, NY (United States)]; Lee, Won Jae [Stony Brook Univ., NY (United States)]; Liu, Ruyan [Stony Brook Univ., NY (United States)]. DOE Contract: SC0012704. Subjects: 77 NANOSCIENCE AND NANOTECHNOLOGY