Negative thermal expansion coefficient and amorphization in defective 4H-SiC

This paper presents thermal expansion coefficient (TEC) and amorphization in 4H-SiC containing point defects at different concentrations. We considered vacancy defects, interstitial defects, and Frenkel pair defects and investigated the thermomechanical response of the lattice over a wide range of temperatures using classical molecular dynamics simulations. The results show that 4H-SiC with vacancy defects exhibits a negative TEC above a critical defect density of around 9% (irrespective of the temperature). With interstitial defects, it exhibits a positive TEC (regardless of the defect density), and with Frenkel pair defects it shows a transition from positive TEC to negative TEC for a defect density greater than 8%. The coupling between temperature-induced expansion and defect-introduced stress in the lattice forms the mechanistic basis for the observed variation in TEC. Furthermore, the specific heat decreases rapidly with an increase in defect density at room temperature, with the highest sensitivity of the lattice observed for the Frenkel pair defects followed by interstitial defects and then by vacancy defects. Finally, these findings highlight the critical implications of defects on thermal expansion behavior of 4H-SiC with applications in radiation environments.. Authors: Grome, Christopher A. [Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States); Univ. of Delaware, Newark, DE (United States)] (ORCID:000900019005439X); Hossain, Zubaer [Texas A & M Univ., College Station, TX (United States); Univ. of Delaware, Newark, DE (United States)]. DOE Contract: AC52-07NA27344. Subjects: 36 MATERIALS SCIENCE; 42 ENGINEERING; amorphization; displacement damage; radiation-hardening; silicon carbide; specific heat capacity; thermal expansion coefficient