Slope Efficiency and Voltage Reduction at High Current Densities in AlInGaAs Diode Lasers

Here, the slope efficiency and drive voltage of broad area AlInGaAs laser diodes near 865 nm is observed to decrease significantly under quasi-CW pulsed operation at currents well above threshold, in a manner that cannot be explained by thermal effects or carrier leakage over heterojunction barriers. Simulations show that the slope efficiency reduction is explicable by increased free carrier absorption in the waveguide region. Empirical formulas are presented to represent these effects in a closed analytic form suitable for use in simulators for diode-pumped laser systems.. Authors: Deri, Robert J. [Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)]; Fenwick, William E. [Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)] (ORCID:000900058479071X); Li, Jiang [Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)]; Pope, David L. [Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)]; Boisselle, Matthew C. [Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)] (ORCID:0000000187377983). DOE Contract: AC52-07NA27344. Subjects: 47 OTHER INSTRUMENTATION; Lasers; diode lasers; power conversion; quantum well lasers; semiconductor device modeling; semiconductor lasers