Tunable polar distortions and magnetism in Gd<sub>π₯</sub>β’La<sub>1βπ₯</sub>β’PtSb epitaxial films
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Hexagonal π΄β’π΅β’πΆ intermetallics are predicted to have tunable ferroelectric, topological, and magnetic properties as a function of the polar buckling of π΅β’πΆ atomic planes. Here, we report the impact of isovalent lanthanide substitution on the buckling, structural phase transitions, and electronic and magnetic properties of Gd<sub>π₯</sub>β’La<sub>1βπ₯</sub>β’PtSb films grown by molecular beam epitaxy (MBE) on π plane sapphire substrates. The Gd<sub>π₯</sub>β’La<sub>1βπ₯</sub>β’PtSb films form a solid solution from π₯=0 to π₯=1 and retain the polar hexagonal structure (πβ’6<sub>3</sub>β’πβ’π) out to π₯ β€ 0.95. With increasing π₯, the PtSb buckling increases and the out-of-plane lattice constant π decreases due to the lanthanide contraction. While hexagonal LaPtSb is a highly conductive polar metal, the carrier density decreases with π₯ until an abrupt phase transition to a zero band overlap semimetal is found for cubic GdPtSb at π₯=1. The magnetic susceptibility peaks at small but finite π₯, which we attribute to Ruderman-Kittel-Kasuya-Yosida (RKKY) coupling between localized 4β’π moments, whose concentration increases with π₯, and free carriers that decrease with π₯. Samples with π₯β₯0.3 show antiferromagnetic Curie-Weiss behavior and a Neel temperature that increases with π₯. The Gd<sub>π₯</sub>β’La<sub>1βπ₯</sub>β’PtSb system provides opportunities to dramatically alter the polar buckling and concentration of local 4β’π moments.. Authors: Du, Dongxue [Univ. of Wisconsin, Madison, WI (United States)]; Zhang, Chenyu [Univ. of Wisconsin, Madison, WI (United States)] (ORCID:0000000274227027); Wei, Jingrui [Univ. of Wisconsin, Madison, WI (United States)]; Teng, Yujia [Rutgers Univ., New Brunswick, NJ (United States)] (ORCID:0009000200203441); Genser, Konrad T. [Rutgers Univ., New Brunswick, NJ (United States)]. DOE Contract: SC0023958. Subjects: 36 MATERIALS SCIENCE; electronic structure; ferroelectricity; magnetism; molecular beam epitaxy