Single Metal Atom Catalysts Prepared by Diluted Atomic Layer Deposition

The scalable and facile preparation of single-atom catalysts remains a critical challenge. Here, in this study, we introduce diluted atomic layer deposition (DALD), a unique approach for synthesizing supported metal catalysts with precisely tunable loadings. Unlike conventional metal deposition by ALD which uses pure metal precursors, DALD employs a diluted precursor mixture, combining organometallic precursors with the corresponding free ligand in controlled ratios. The method enables precise control over metal loadings, allowing the synthesis of structures ranging from nanoparticles to isolated single atoms, as exemplified by Ir, Rh, and Pt on high-surface-area γ-Al₂O₃. With its inherent simplicity and exceptional efficiency in metal precursor utilization, DALD represents a highly scalable strategy, unlocking opportunities for integrating single-atom catalysts into industrial processes.. Authors: Shen, Kai [Univ. of Pennsylvania, Philadelphia, PA (United States)]; Fan, Mengjie [Univ. of Pennsylvania, Philadelphia, PA (United States)]; Liu, Zhanyuan [Univ. of Pennsylvania, Philadelphia, PA (United States)]; Satyanand, Sakshi [Univ. of Pennsylvania, Philadelphia, PA (United States); Univ. of Delaware, Newark, DE (United States)]; Yan, George [Univ. of Delaware, Newark, DE (United States)] (ORCID:0009000238705447). DOE Contract: SC0012704. Subjects: 36 MATERIALS SCIENCE; Aluminum Oxide; Atomic Layer Deposition; Iridium; Platinum; Rhodium; Single Atom Catalysts