A General and Modular Approach to Solid-State Integration of Zero-Dimensional Quantum Systems

Here, we present an all-electrical readout mechanism for quasi-0D quantum states (0D-QS), such as point defects, adatoms, and molecules, that is modular and general, providing an approach that is amenable to scaling and integration with other solid-state quantum technologies. Our approach relies on the creation of high-quality tunnel junctions via the mechanical exfoliation and stacking of multilayer graphene (MLG) and hexagonal boron nitride (hBN) to encapsulate the target system in an MLG/hBN/0D-QS/hBN/MLG heterostructure. This structure allows for all-electronic spectroscopy and readout of candidate systems through a combination of coulomb and spin-blockade. As a proof of principle, we demonstrate electronic tunneling spectroscopy of point defects in hBN and the molecular qubit vanadyl phthalocyanine. Our approach demonstrates a new pathway for the incorporation of molecules and atomic defects into solid-state quantum devices and circuits along with a readout scheme that does not rely on highly constrained optical processes for photonic readout.. Authors: Kavand, Marzieh [The Ohio State Univ., Columbus, OH (United States); Univ. of Alabama, Tuscaloosa, AL (United States)] (ORCID:0009000115463636); Phillips, Zoe [The Ohio State Univ., Columbus, OH (United States)]; Koll, William H. [The Ohio State Univ., Columbus, OH (United States)] (ORCID:0009000321723187); Hamilton, Morgan [The Ohio State Univ., Columbus, OH (United States)]; Perez-Hoyos, Ethel [The Ohio State Univ., Columbus, OH (United States)]. DOE Contract: AC02-07CH11358. Subjects: defects in hexagonal boron nitride; molecular tunnel junction; tunneling spectroscopy; two-dimensional tunnel junction