Geometry-driven modeling of electron localization in InAs/GaAs double quantum dots

The coupled electronic states in two-dimensional (2D) and three-dimensional (3D) double quantum dot (DQD) systems are investigated using a phenomenological model applied to InAs/GaAs heterostructures. The single-band k • p effective potential approach previously proposed by our group is employed to numerically calculate the energy spectrum and spatial localization of a single electron, serving as an indicator of the coupling strength within the binary system. For identical quantum dots (QDs) in a DQD, the electronic states exhibit ideal coherence. We systematically vary the DQD geometry and the strength of the confinement potential (via an applied electric field) to examine the effects of symmetry breaking and the sensitivity of electron localization in both identical and nearly identical DQDs. Our results show that coherence in DQDs is highly sensitive to these subtle variations. This sensitivity can be harnessed to detect changes in the surrounding environment, such as fluctuations in chemical or electrical properties that affect the DQD system.. Authors: Filikhin, Igor [North Carolina Central University, Durham, NC (United States)]; Vlahovic, Branislav [North Carolina Central University, Durham, NC (United States)]; Zatezalo, Tanja [North Carolina Central University, Durham, NC (United States)]; Flanigan, Patrick [North Carolina Central University, Durham, NC (United States)]; Oxley, Jimmie [University of Rhode Island, Kingston, RI (United States)]. DOE Contract: NA0003979; SC0014664. Subjects: electron localization; electron tunneling; quantum sensors; quantum wells and dots; semiconductors